Cree SiC MOSFET
「Cree SiC MOSFET」熱門搜尋資訊
「Cree SiC MOSFET」文章包含有：「DiscreteSiliconCarbide(SiC)MOSFETs」、「PowerProducts」、「650VSiliconCarbideMOSFETs」、「1200VDiscreteSiliconCarbideMOSFETs」、「1700VDiscreteSiliconCarbideMOSFETs」、「650VDiscreteSiliconCarbideMOSFETs」、「CreeC3M0350120DSiCMOSFET」、「CreeC3M0065090JSiCMOSFET」、「900VDiscreteSiliconCarbideMOSFETs」、「CreeC3M0065100JSiCMOSFET」
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Discrete Silicon Carbide (SiC) MOSFETs
https://www.wolfspeed.com
Power Products
https://www.wolfspeed.com
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. View ...
650 V Silicon Carbide MOSFETs
https://www.digikey.com
2021年3月3日
1200 V Discrete Silicon Carbide MOSFETs
https://www.wolfspeed.com
Industry's broadest portfolio of 1200 V Silicon Carbide (SiC) MOSFETs; designed for high-speed switching and improved system-level efficiency.
1700 V Discrete Silicon Carbide MOSFETs
https://www.wolfspeed.com
Wolfspeed's 1700 V Silicon Carbide (SiC) MOSFETs enable enhanced system efficiency and reliability through high-speed switching and high blocking voltage.
650 V Discrete Silicon Carbide MOSFETs
https://www.wolfspeed.com
Wolfspeed's 650 V Discrete Silicon Carbide (SiC) MOSFETs are ideal for applications including high performance industrial power supplies; server/telecom ...
Cree C3M0350120D SiC MOSFET
https://assets.wolfspeed.com
1.8. 2.5. 3.6. V. VDS = VGS, ID = 1 mA. Fig. 11. 2.0. V. VDS = VGS, ID = 1 mA, TJ = 150ºC. IDSS. Zero Gate Voltage Drain Current.
Cree C3M0065090J SiC MOSFET
https://www.tme.eu
• SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support. • Application Considerations for Silicon-Carbide MOSFETs: www.cree ...
900 V Discrete Silicon Carbide MOSFETs
https://www.wolfspeed.com
Wolfspeed's 900 V Silicon Carbide (SiC) MOSFETs offer a minimum of 900 V across the full operating temperature range for fast switching power devices; ...
Cree C3M0065100J SiC MOSFET
https://assets.wolfspeed.com
C3MTM SiC MOSFET technology. • Low parasitic inductance with separate driver source pin. • 7mm of creepage distance between drain and source.